Atomic Models of Dislocations for Si and Gaas
نویسندگان
چکیده
An atomic model of dislocations in face centered cubic crystals with a twoatom basis is proposed. This model has the standard cubic anisotropic elasticity as its continuum limit, and its main ingredients are the elastic stiffness constants and a dimensionless periodic function that restores the translation invariance of the crystal and influences the dislocation size. Possible applications include semiconductor materials such as silicon and GaAs.
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تاریخ انتشار 2004